FIR8N60FG g d s s g d marking diagram pin connection to-220f a = assembly location y = year ww = work week = specific device code fir8n60f fir8n60f page 1/8 @ 2011 copyright by american first semiconductor silicon n-channel power mosfet features z fast switching z esd improved capability z low gate charge (typical data:21nc) z low reverse transfer capacitances (typical:15pf) z 100% single pulse avalanche energy test applications power switch circuit of adaptor and charger. v dss 600 v i d 7 a p d (t c =25 ) 30 w r ds(on) 1.10 ? tc= 25 unless otherwise specified absolute symbol parameter rating units v dss drain-to-source voltage 600 v continuous drain current 7 a i d continuous drain current t c = 100 c 4.5 a i dm a1 pulsed drain current 28 a v gs gate-to-source voltage 20 v e as a2 single pulse avalanche energy 550 mj e ar a1 avalanche energy ,repetitive 54 mj i ar a1 avalanche current 10.4 a dv/dt a3 peak diode recovery dv/dt 5.0 v/ns power dissipation 100 w p d derating factor above 25c 0.80 w/ v esd(g-s) gate source esd (hbm-c= 100pf, r=1.5k ? ) 3000 v t j t stg operating junction and storage temperature range 150 ?55 to 150 t l maximumtemperature for soldering 300 yaww free datasheet http://
FIR8N60FG page 2/8 www.first-semi.com electrical characteristics tc= 25 unless otherwise specified off characteristics rating symbol parameter test conditions min. typ. max. units v dss drain to source breakdown voltage v gs =0v, i d =250a 600 -- -- v bv dss / t j bvdss temperature coefficient id=250ua,reference2 5 -- 0.74 -- v/ v ds = 600v, v gs = 0v, t a = 25 -- -- 25 i dss drain to source leakage current v ds =480v, v gs = 0v, t a = 125 -- -- 250 a i gss(f) gate to source forward leakage v gs =+20v -- -- 10 a i gss(r) gate to source reverse leakage v gs =-20v -- -- -10 a on characteristics rating symbol parameter test conditions min. typ. max. units r ds(on) drain-to-source on-resistance v gs =10v,i d =3.5a -- 1.10 1.25 ? v gs(th) gate threshold voltage v ds = v gs , i d = 250a 2.0 3.0 4.0 v pulse width tp 380s, ? 2% dynamic characteristics rating symbol parameter test conditions min. typ. max. units g fs forward transconductance v ds =15v, i d =3.5a -- 6.0 -- s c iss input capacitance -- 1380 -- c oss output capacitance -- 170 -- c rss reverse transfer capacitance v gs = 0v v ds = 25v f = 1.0mhz -- 15 -- pf resistive switching characteristics rating symbol parameter test conditions min. typ. max. units t d(on) turn-on delay time -- 13 -- tr rise time -- 10 -- t d(off) turn-off delay time -- 26 -- t f fall time i d =7.0a v dd = 300v v gs = 10v r g = 4.7 ? -- 8 -- ns q g total gate charge -- 30 39 q gs gate to source charge -- 6 -- q gd gate to drain (?miller?)charge i d =7.0a v dd =480v v gs = 10v -- 14 -- nc free datasheet http://
FIR8N60FG page 3/8 www.first-semi.com source-drain diode characteristics rating symbol parameter test conditions min. typ. max. units i s continuous source current (body diode) -- -- 7 a i sm maximum pulsed current (body diode) -- -- 28 a v sd diode forward voltage i s =7.0a,v gs =0v -- -- 1.5 v trr reverse recovery time -- 570 -- ns qrr reverse recovery charge -- 4.3 -- nc i rrm reverse recovery current i s =7.0a,t j = 25 c di f /dt=100a/us, v gs =0v -- 12 -- a pulse width tp 380s, ? 2% symbol parameter typ. units r jc junction-to-case 1.25 /w r ja junction-to-ambient 62 /w gate-source zener diode rating symbol parameter test conditions min. typ. max. units v gso gate-source breakdown voltage i gs = 1ma(open drain) 20 v the built-in back-to-back zener diodes have specifically been designed to enhance not only the device?s esd capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. in this respect the zene r voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device?s inte grity. these integrated zener diodes thus avoid the usage of external components. a1 repetitive rating; pulse width limited by maximum junction temperature a2 l=10.0mh, i d =7a, start t j =25 a3 i sd =7a,di/dt 100a/us,v dd bv ds, start t j =25 free datasheet http://
{ e { { { e { { fig. 1 i d - v ds fig. 4 i s - v sd fig. 3 r ds ( on ) - i d fig.6 v gs - q g electrical characteristic curves { { { {?{ {{ {{{{{{{{{ {{{{{{{??? {{??? {{??? {{??? {{??? {{ ?? ?{ ?? e fig. 2 i d - v gs fig. 5 capacitance - v ds FIR8N60FG page 4/8 www.first-semi.com free datasheet http://
{? {? { { q { { fig.8 r ds(on) - t j fig. 9 i d - t c fig. 7 v dss - t j fig. 10 safe operating area electrical characteristic curves FIR8N60FG page 5/8 www.first-semi.com free datasheet http://
fig. 11 gate charge test circuit & waveform fig. 12 resistive switching test circuit & waveform fig. 13 e as test circuit & waveform FIR8N60FG page 6/8 www.first-semi.com free datasheet http://
fig. 14 diode reverse recovery time test circuit & waveform FIR8N60FG page 7/8 www.first-semi.com free datasheet http://
FIR8N60FG page 8/8 www.first-semi.com dim a min max min max millimeters 0.617 0.635 15.67 16.12 inches b 0.392 0.419 9.96 10.63 c 0.177 0.193 4.50 4.90 d 0.024 0.039 0.60 1.00 f 0.116 0.129 2.95 3.28 g 0.100 bsc 2.54 bsc h 0.118 0.135 3.00 3.43 j 0.018 0.025 0.45 0.63 k 0.503 0.541 12.78 13.73 l 0.048 0.058 1.23 1.47 n 0.200 bsc 5.08 bsc q 0.122 0.138 3.10 3.50 r 0.099 0.117 2.51 2.96 s 0.092 0.113 2.34 2.87 u 0.239 0.271 6.06 6.88 ? b ? ? y ? g n d l k h a f q 3 pl 123 m b m 0.25 (0.010) y seating plane ? t ? u c s j r notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch 3. 221d-01 thru 221d-02 obsolete, new standard 221d-03. package dimensions to-220f free datasheet http://
|
